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基于超薄金属的宽透明电极。

Widely transparent electrodes based on ultrathin metals.

作者信息

Ghosh D S, Martinez L, Giurgola S, Vergani P, Pruneri V

机构信息

ICFO-Institut de Ciències Fotòniques, Mediterranean Technology Park, Barcelona, Spain.

出版信息

Opt Lett. 2009 Feb 1;34(3):325-7. doi: 10.1364/ol.34.000325.

DOI:10.1364/ol.34.000325
PMID:19183646
Abstract

Transparent electrodes made of single-component ultrathin (<10 nm) metal films (UTMFs) are obtained by sputtering deposition. We show that the optical transparency of the deposited films (chromium and nickel) is comparable to that of indium tin oxide (ITO) in the visible and near-infrared range (0.4-2.5 microm), while it can be significantly higher in the ultraviolet (175-400 nm) and mid-infrared (2.5-25 microm) regions. Despite their very small thickness, the deposited UTMFs are also uniform and continuous over the 10 cm substrate, as it is confirmed by the measured low electrical resistivity. The excellent optical and electrical properties, stability, compatibility with active materials, process simplicity, and potential low cost make UTMFs high-quality transparent electrodes for the optoelectronics industry, seriously competing with widely used transparent conductive oxides, such as ITO.

摘要

通过溅射沉积获得了由单组分超薄(<10纳米)金属薄膜(UTMFs)制成的透明电极。我们表明,沉积薄膜(铬和镍)在可见光和近红外范围(0.4 - 2.5微米)内的光学透明度与氧化铟锡(ITO)相当,而在紫外(175 - 400纳米)和中红外(2.5 - 25微米)区域其透明度可能显著更高。尽管沉积的UTMFs厚度非常小,但通过测量的低电阻率证实,它们在10厘米的基板上也是均匀且连续的。UTMFs优异的光学和电学性能、稳定性、与活性材料的兼容性、工艺简单性以及潜在的低成本,使其成为光电子行业高质量的透明电极,可与广泛使用的透明导电氧化物(如ITO)展开激烈竞争。

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