Świniarski M, Dużyńska A, Gertych A P, Czerniak-Łosiewicz K, Judek J, Zdrojek M
Faculty of Physics, Warsaw University of Technology, Koszykowa 75, 00-662, Warszawa, Poland.
Sci Rep. 2021 Aug 17;11(1):16690. doi: 10.1038/s41598-021-96307-6.
We report a systematic theoretical and experimental investigation on the electronic transport evolution in metallic and semiconducting carbon nanotubes thin films enriched by gold nanocrystals. We used an ultra-clean production method of both types of single-walled carbon nanotube thin films with/without gold nanocrystals, which were uniformly dispersed in the whole volume of the thin films, causing a modification of the doping level of the films (verified by Raman spectroscopy). We propose a modification of the electronic transport model with the additional high-temperature features that allow us to interpret the transport within a broader temperature range and that are related to the conductivity type of carbon nanotubes. Moreover, we demonstrate, that the proposed model is also working for thin films with the addition of gold nanocrystals, and only a change of the conductivity level of our samples is observed caused by modification of potential barriers between carbon nanotubes. We also find unusual behavior of doped metallic carbon nanotube thin film, which lowers its conductivity due to doping.
我们报告了一项关于富含金纳米晶体的金属和半导体碳纳米管薄膜中电子输运演化的系统理论和实验研究。我们采用了一种超清洁的生产方法来制备有无金纳米晶体的两种类型的单壁碳纳米管薄膜，金纳米晶体均匀分散在薄膜的整个体积中，导致薄膜掺杂水平发生改变（通过拉曼光谱验证）。我们提出了一种电子输运模型的修正，该修正具有额外的高温特性，使我们能够在更宽的温度范围内解释输运现象，并且这些特性与碳纳米管的导电类型有关。此外，我们证明，所提出的模型对于添加了金纳米晶体的薄膜也适用，并且仅观察到由于碳纳米管之间势垒的改变导致我们样品的导电水平发生变化。我们还发现了掺杂金属碳纳米管薄膜的异常行为，即由于掺杂其导电性降低。
