Bulmer John S, Lekawa-Raus Agnieszka, Rickel Dwight G, Balakirev Fedor F, Koziol Krzysztof K
Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Rd., Cambridge, UK.
Faculty of Mechatronics, Warsaw University of Technology, Warsaw, PL, Poland.
Sci Rep. 2017 Sep 22;7(1):12193. doi: 10.1038/s41598-017-12546-6.
We explored high-field (60 T) magneto-resistance (MR) with two carbon nanotube (CNT) material classes: (1) unaligned single-wall CNTs (SWCNT) films with controlled metallic SWCNT concentrations and doping degree and (2) CNT fiber with aligned, long-length microstructure. All unaligned SWCNT films showed localized hopping transport where high-field MR saturation definitively supports spin polarization instead of a more prevalent wave function shrinking mechanism. Nitric acid exposure induced an insulator to metal transition and reduced the positive MR component. Aligned CNT fiber, already on the metal side of the insulator to metal transition, had positive MR without saturation and was assigned to classical MR involving electronic mobility. Subtracting high-field fits from the aligned fiber's MR yielded an unconfounded negative MR, which was assigned to weak localization. It is concluded that fluctuation induced tunnelling, an extrinsic transport model accounting for most of the aligned fiber's room temperature resistance, appears to lack MR field dependence.
我们用两类碳纳米管(CNT)材料探索了高场(60 T)磁阻(MR):(1)具有可控金属单壁碳纳米管(SWCNT)浓度和掺杂程度的未对齐单壁碳纳米管薄膜,以及(2)具有对齐的长长度微观结构的碳纳米管纤维。所有未对齐的单壁碳纳米管薄膜均表现出局域跳跃输运,其中高场磁阻饱和明确支持自旋极化,而非更普遍的波函数收缩机制。硝酸暴露导致绝缘体向金属转变,并降低了正磁阻分量。已处于绝缘体向金属转变的金属侧的对齐碳纳米管纤维具有不饱和的正磁阻,并被归因于涉及电子迁移率的经典磁阻。从对齐纤维的磁阻中减去高场拟合得到一个无混淆的负磁阻,其被归因于弱局域化。得出的结论是,波动诱导隧穿(一种解释了大部分对齐纤维室温电阻的外在输运模型)似乎缺乏磁阻场依赖性。