Cao Tao, Luo Laitang, Huang Yifeng, Ye Bing, She Juncong, Deng Shaozhi, Chen Jun, Xu Ningsheng
State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, People's Republic of China.
Sun Yat-sen University-Carnegie Mellon University (SYSU-CMU) Shunde International Joint Research Institute, Shunde 528300, People's Republic of China.
Sci Rep. 2016 Sep 22;6:33983. doi: 10.1038/srep33983.
The development of high performance nano-electron-emitter arrays with well reliability still proves challenging. Here, we report a featured integrated nano-electron-emitter. The vertically aligned nano-emitter consists of two segments. The top segment is an intrinsically lightly n-type doped ZnO nano-tip, while the bottom segment is a heavily p-type doped Si nano-pillar (denoted as p-Si/ZnO nano-emitter). The anode voltage not only extracted the electron emission from the emitter apex but also induced the inter-band electron tunneling at the surface of the p-Si/ZnO nano-junction. The designed p-Si/ZnO emitter is equivalent to a ZnO nano-tip individually ballasted by a p-Si/ZnO diode and a parasitic tunneling field effect transistor (TFET) at the surface of the p-Si/ZnO junction. The parasitic TFET provides a channel for the supply of emitting electron, while the p-Si/ZnO diode is benefit for impeding the current overloading and prevent the emitters from a catastrophic breakdown. Well repeatable and stable field emission current were obtained from the p-Si/ZnO nano-emitters. High performance nano-emitters was developed using diamond-like-carbon coated p-Si/ZnO tip array (500 × 500), i.e., 178 μA (4.48 mA/cm) at 75.7 MV/m.
开发具有良好可靠性的高性能纳米电子发射体阵列仍然具有挑战性。在此，我们报道了一种特色集成纳米电子发射体。垂直排列的纳米发射体由两段组成。顶部段是本征轻度n型掺杂的ZnO纳米尖端，而底部段是重p型掺杂的Si纳米柱（表示为p-Si/ZnO纳米发射体）。阳极电压不仅从发射体顶端提取电子发射，还在p-Si/ZnO纳米结表面诱导带间电子隧穿。所设计的p-Si/ZnO发射体相当于一个由p-Si/ZnO二极管和p-Si/ZnO结表面的寄生隧穿场效应晶体管（TFET）单独镇流的ZnO纳米尖端。寄生TFET为发射电子的供应提供了一个通道，而p-Si/ZnO二极管有利于阻止电流过载并防止发射体发生灾难性击穿。从p-Si/ZnO纳米发射体获得了良好的可重复和稳定的场发射电流。使用类金刚石碳涂覆的p-Si/ZnO尖端阵列（500×500）开发了高性能纳米发射体，即在75.7 MV/m时为178 μA（4.48 mA/cm）。
