Shan Yinghui, Fonash Stephen J
Engineering Science Program and Center for Nanotechnology Education and Utilization, The Pennsylvania State University, University Park, Pennsylvania 16802, USA.
ACS Nano. 2008 Mar;2(3):429-34. doi: 10.1021/nn700232q.
Silicon nanowires (SiNWs) have been grown with our nanochannel-template-guided "grow-in-place" approach and used in-place for resistor and transistor fabrication. In this methodology, empty nanochannels of a permanent template literally guide the vapor-liquid-solid (VLS) mechanism of SiNW growth and give control of the self-assembling nanowires' size, number, position, and orientation. The approach is demonstrated to give self-positioned/self-assembled SiNWs which are then used for device fabrication without any intervening SiNW collection, positioning, and assembling steps. These SiNWs may be grown so that they are extruded from, or confined within, the permanent nanochannel-template, as desired. The nanowire grow-in-place fabrication approach offers the potential for mass and environmentally benign manufacturing. The latter potential arises since only the exact number of nanowires needed is fabricated and these nanowires are always fixed at the position of use by the guiding nanochannels.
我们采用纳米通道模板引导的“原位生长”方法生长了硅纳米线（SiNWs），并将其直接用于电阻器和晶体管制造。在这种方法中，永久性模板的空纳米通道实际上引导了SiNW生长的气-液-固（VLS）机制，并能够控制自组装纳米线的尺寸、数量、位置和取向。结果表明，该方法可生成自定位/自组装的SiNWs，然后无需任何中间的SiNW收集、定位和组装步骤即可用于器件制造。这些SiNWs可以根据需要生长，使其从永久性纳米通道模板中挤出或限制在其中。纳米线原位生长制造方法具有大规模和环境友好制造的潜力。之所以有后一种潜力，是因为只制造了所需的确切数量的纳米线，并且这些纳米线总是由引导纳米通道固定在使用位置。
