Meisenkothen Frederick, Wheeler Robert, Uchic Michael D, Kerns Robert D, Scheltens Frank J
Air Force Research Laboratory, Materials Characterization Facility, Wright Patterson Air Force Base, OH 45433, USA.
Microsc Microanal. 2009 Apr;15(2):83-92. doi: 10.1017/S1431927609090242.
Electron channeling effects can create measurable signal intensity variations in all product signals that result from the scattering of the electron beam within a crystalline specimen. Of particular interest to the X-ray microanalyst are any variations that occur within the characteristic X-ray signal that are not directly related to a specimen composition variation. Many studies have documented the effect of crystallographic orientation on the local X-ray yield; however, the vast majority of these studies were carried out on thin foil specimens examined in transmission. Only a few studies have addressed these effects in bulk specimen materials, and these analyses were generally carried out at common scanning electron microscope microanalysis overvoltages (>1.5). At these overvoltage levels, the anomalous transmission effect is weak. As a result, the effect of electron channeling on the characteristic X-ray signal intensity has traditionally been overlooked in the field of quantitative electron probe microanalysis. The present work will demonstrate that electron channeling can produce X-ray variations of up to 26%, between intensity maxima and minima, in low overvoltage X-ray microanalyses of bulk specimens. Intensity variations of this magnitude will significantly impact the accuracy of qualitative and quantitative X-ray microanalyses at low overvoltage on engineering structural materials.
电子通道效应能够在因电子束在晶体试样内散射而产生的所有产物信号中产生可测量的信号强度变化。对于X射线微分析师而言,特别感兴趣的是特征X射线信号内发生的、与试样成分变化无直接关系的任何变化。许多研究记录了晶体取向对局部X射线产率的影响;然而,这些研究绝大多数是在透射模式下检查的薄箔试样上进行的。只有少数研究探讨了块状试样材料中的这些效应,并且这些分析通常是在普通扫描电子显微镜微分析过电压(>1.5)下进行的。在这些过电压水平下,反常透射效应很弱。因此,在定量电子探针微分析领域,电子通道对特征X射线信号强度的影响传统上一直被忽视。目前的工作将表明,在块状试样的低过电压X射线微分析中,电子通道可在强度最大值和最小值之间产生高达26%的X射线变化。这种幅度的强度变化将对工程结构材料在低过电压下的定性和定量X射线微分析的准确性产生重大影响。