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小硼和氧化硼团簇及其阴离子的热化学与电子结构

Thermochemistry and electronic structure of small boron and boron oxide clusters and their anions.

作者信息

Nguyen Minh Tho, Matus Myrna H, Ngan Vu Thi, Grant Daniel J, Dixon David A

机构信息

Department of Chemistry, The University of Alabama, Shelby Hall, Tuscaloosa, Alabama 35487-0336, USA.

出版信息

J Phys Chem A. 2009 Apr 30;113(17):4895-909. doi: 10.1021/jp811391v.

Abstract

Thermochemical properties of a set of small boron (B(n)) and boron oxide (B(n)O(m)) clusters, with n = 1-4 and m = 0-3, their anions, and the B(4)(2-) dianion, were calculated by using coupled-cluster theory CCSD(T) calculations with the aug-cc-pVnZ (n = D, T, Q, 5) basis sets extrapolated to the complete basis set limit with additional corrections. Enthalpies of formation, bond dissociation energies, singlet-triplet or doublet-quartet separation gaps, adiabatic electron affinities (EA), and both vertical electron attachment and detachment energies were evaluated. The predicted heats of formation show agreement close to the error bars of the literature results for boron oxides with the largest error for OBO. Our calculated adiabatic EAs are in good agreement with recent experiments: B (calc, 0.26 eV; exptl, 0.28 eV), B(2) (1.95, 1.80), B(3) (2.88, 2.820 +/- 0.020), B(4) (1.68, 1.60 +/- 0.10), BO (2.50, 2.51), BO(2) (4.48, 4.51), BOB (0.07), B(2)O(2) (0.37), B(3)O (2.05), B(3)O(2) (2.94, 2.94), B(4)O (2.58), and B(4)O(2) (3.14, 3.160 +/- 0.015). The BO bond is strong, so this moiety is maintained in most of the clusters. Thermochemical parameters of clusters are not linearly additive with respect to the number of B atoms. The EA tends to be larger in the dioxides. The growth mechanism of small boron oxides should be determined by a number of factors: (i) formation of BO bonds, (ii) when possible, formation of a cyclic B(3) or B(4), and (iii) combination of a boron cycle and a BO bond. When these factors compete, the strength of the BO bonds tends to compensate the destabilization arising from a loss of binding in the cyclic boron clusters, in such a way that a linear boron oxide prevails. When the B(2) moiety is present in these linear clusters, the oxide derivatives prefer a high spin state.

摘要

使用耦合簇理论CCSD(T)计算,并采用aug-cc-pVnZ(n = D、T、Q、5)基组,通过外推至完整基组极限并进行额外校正,计算了一组小硼(B(n))和氧化硼(B(n)O(m))团簇(n = 1 - 4且m = 0 - 3)、它们的阴离子以及B(4)(2-)二价阴离子的热化学性质。评估了生成焓、键解离能、单重态 - 三重态或二重态 - 四重态分离能隙、绝热电子亲和能(EA)以及垂直电子附着和脱离能。预测的生成热与文献中氧化硼结果的误差范围接近,其中OBO的误差最大。我们计算的绝热电子亲和能与最近的实验结果吻合良好:B(计算值,0.26 eV;实验值,0.28 eV)、B(2)(1.95,1.80)、B(3)(2.88,2.820 ± 0.020)、B(4)(1.68,1.60 ± 0.10)、BO(2.50,2.51)、BO(2)(4.48,4.51)、BOB(0.07)、B(2)O(2)(0.37)、B(3)O(2.05)、B(3)O(2)(2.94,2.94)、B(4)O(2.58)以及B(4)O(2)(3.14,3.160 ± 0.015)。BO键很强,所以这个部分在大多数团簇中得以保留。团簇的热化学参数并非相对于B原子数呈线性加和。在二氧化物中电子亲和能往往更大。小氧化硼团簇的生长机制应由多个因素决定:(i)BO键的形成;(ii)可能的话,形成环状B(3)或B(4);(iii)硼环与BO键的结合。当这些因素相互竞争时,BO键的强度往往会补偿环状硼团簇中键合损失引起的不稳定,从而使线性氧化硼占主导。当这些线性团簇中存在B(2)部分时,氧化物衍生物更倾向于高自旋态。

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