Hsieh Ya-Ping, Chen Hsin-Yi, Lin Ming-Zhang, Shiu Shu-Chia, Hofmann Mario, Chern Ming-Yau, Jia Xiaoting, Yang Ying-Jay, Chang Hsiu-Ju, Huang Hsuan-Ming, Tseng Shao-Chin, Chen Li-Chyong, Chen Kuei-Hsien, Lin Ching-Fuh, Liang Chi-Te, Chen Yang-Fang
Department of Physics, National Taiwan University, Taipei 106, Taiwan.
Nano Lett. 2009 May;9(5):1839-43. doi: 10.1021/nl803804a.
A new and general approach to achieving efficient electrically driven light emission from a Si-based nano p-n junction array is introduced. A wafer-scale array of p-type silicon nanotips were formed by a single-step self-masked dry etching process, which is compatible with current semiconductor technologies. On top of the silicon nanotip array, a layer of n-type ZnO film was grown by pulsed laser deposition. Both the narrow line width of 10 nm in cathodoluminescence spectra and the appearance of multiphonon Raman spectra up to the fourth order indicate the excellent quality of the ZnO film. The turn-on voltage of our ZnO/Si nanotip array is found to be approximately 2.4 V, which is 2 times smaller than its thin film counterpart. Moreover, electroluminescence (EL) from our ZnO/Si nanotips array light-emitting diode (LED) has been demonstrated. Our results could open up new possibilities to integrate silicon-based optoelectronic devices, such as highly efficient LEDs, with standard Si ultralarge-scale integrated technology.
介绍了一种实现基于硅的纳米 p-n 结阵列高效电驱动发光的全新通用方法。通过一步自掩膜干法蚀刻工艺形成了晶圆级的 p 型硅纳米尖阵列，该工艺与当前半导体技术兼容。在硅纳米尖阵列顶部，通过脉冲激光沉积生长了一层 n 型 ZnO 薄膜。阴极发光光谱中 10 nm 的窄线宽以及高达四阶的多声子拉曼光谱的出现均表明 ZnO 薄膜具有优异的质量。发现我们的 ZnO/Si 纳米尖阵列的开启电压约为 2.4 V，比其薄膜对应物小 2 倍。此外，已经证明了我们的 ZnO/Si 纳米尖阵列发光二极管（LED）的电致发光（EL）。我们的结果可能为将基于硅的光电器件（如高效 LED）与标准 Si 超大规模集成技术集成开辟新的可能性。
