Chen Hsin-Tsung, Chang Jee-Gong, Chen Hui-Lung, Ju Shin-Pon
National Center for High-performance Computing, No. 28, Nan-Ke 3rd Rd., Hsin-Shi, Tainan, 74147 Taiwan.
J Comput Chem. 2009 Nov 30;30(15):2433-42. doi: 10.1002/jcc.21247.
The interactions and reduction mechanisms of O2 molecule on the fully oxidized and reduced CeO2 surface were studied using periodic density functional theory calculations implementing on-site Coulomb interactions (DFT + U) consideration. The adsorbed O2 species on the oxidized CeO2 surface were characterized by physisorption. Their adsorption energies and vibrational frequencies are within -0.05 to 0.02 eV and 1530-1552 cm(-1), respectively. For the reduced CeO2 surface, the adsorption of O2 on Ce4+, one-electron defects (Ce3+ on the CeO2 surface) and two-electron defects (neutral oxygen vacancy) can alter geometrical parameters and results in the formation of surface physisorbed O2, O2a- (0 < a < 1), superoxide (O2-), and peroxide (O(2)(2-)) species. Their corresponding adsorption energies are -0.01 to -0.09, -0.20 to -0.37, -1.34 and -1.86 eV, respectively. The predicted vibrational frequencies of the peroxide, superoxide, O2a- (0 < a < 1) and physisorbed species are 897, 1234, 1323-1389, and 1462-1545 cm(-1), respectively, which are in good agreement with experimental data. Potential energy profiles for the O2 reduction on the oxidized and reduced CeO2 (111) surface were constructed using the nudged elastic band method. Our calculations show that the reduced surface is energetically more favorable than the unreduced surface for oxygen reduction. In addition, we have studied the oxygen ion diffusion process on the surface and in bulk ceria. The small barrier for the oxygen ion diffusion through the subsurface and bulk implies that ceria-based oxides are high ionic conductivity at relatively low temperatures which can be suitable for IT-SOFC electrolyte materials.
利用考虑了在位库仑相互作用(DFT + U)的周期性密度泛函理论计算,研究了O₂分子在完全氧化和还原的CeO₂表面上的相互作用及还原机理。氧化CeO₂表面吸附的O₂物种以物理吸附为特征。它们的吸附能和振动频率分别在-0.05至0.02 eV和1530 - 1552 cm⁻¹范围内。对于还原的CeO₂表面,O₂在Ce⁴⁺、单电子缺陷(CeO₂表面的Ce³⁺)和双电子缺陷(中性氧空位)上的吸附会改变几何参数,并导致表面物理吸附的O₂、O₂a⁻(0 < a < 1)、超氧化物(O₂⁻)和过氧化物(O₂²⁻)物种的形成。它们相应的吸附能分别为-0.01至-0.09、-0.20至-0.37、-1.34和-1.86 eV。预测的过氧化物、超氧化物、O₂a⁻(0 < a < 1)和物理吸附物种的振动频率分别为897、1234、1323 - 1389和1462 - 1545 cm⁻¹,与实验数据吻合良好。使用推挤弹性带法构建了氧化和还原的CeO₂(111)表面上O₂还原的势能剖面图。我们的计算表明,还原表面在能量上比未还原表面更有利于氧还原。此外,我们还研究了氧离子在表面和氧化铈体相中的扩散过程。氧离子通过次表面和体相扩散的小势垒意味着基于氧化铈的氧化物在相对较低温度下具有高离子电导率,这可能适用于IT - SOFC电解质材料。