Coh Sinisa, Vanderbilt David
Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854-8019, USA.
Phys Rev Lett. 2009 Mar 13;102(10):107603. doi: 10.1103/PhysRevLett.102.107603.
We extend the Berry-phase concept of polarization to insulators having a nonzero value of the Chern invariant. The generalization to such Chern insulators requires special care because of the partial occupation of chiral edge states. We show how the integrated bulk current arising from an adiabatic evolution can be related to a difference of bulk polarizations. We also show how the surface charge can be related to the bulk polarization, but only with a knowledge of the wave vector at which the occupancy of the edge state is discontinuous. Furthermore, we present numerical calculations on a model Hamiltonian to provide additional support for our analytic arguments.
我们将极化的贝里相位概念扩展到具有非零陈数不变量的绝缘体。由于手性边缘态的部分占据,对这种陈绝缘体的推广需要特别小心。我们展示了绝热演化产生的整体电流积分如何与整体极化的差异相关。我们还展示了表面电荷如何与整体极化相关,但这仅在知道边缘态占据不连续的波矢时才行。此外,我们在一个模型哈密顿量上进行了数值计算,以进一步支持我们的解析论证。