Ansari S G, Dar M A, Dhage M S, Kim Young Soon, Ansari Z A, Al-Hajry A, Shin Hyung-Shik
School of Chemical Engineering, Chonbuk National University, Jeonju, Jeonbuk 561-756, South Korea.
Rev Sci Instrum. 2009 Apr;80(4):045112. doi: 10.1063/1.3115222.
Tin oxide is a well known nonstoichiometric material with dual valency. The invariance of stoichiometry is very intriguing. As of today no report is available for preparing perfect stoichiometric tin oxide. Here we report a novel method to prepare stoichiometric tin oxide by modifying the known plasma enhanced chemical vapor deposition technique using SnCl(4)-xH(2)O as precursor and O(2) as reactant gas at various temperatures from 300 to 800 degrees C. Tetragonal rutile structure of SnO(2) was found, grown along the [110] direction. X-ray photoelectron spectroscopic measurement showed constant Sn/O ratio. Sn 3d and O 1s were found composed of only Sn(4+) (487.2 eV) and O-Sn(4+) (531.2 eV) with equal peak widths. Raman band intensity ( approximately 633 cm(-1)) was found increasing with temperature, indicating the morphological changes. Sheet resistance of approximately 0.5 kOmega/at 300 degrees C was measured that reduces to approximately 0.1 kOmega/at 600 degrees C. It is found that film stoichiometry remains unaltered, while the structural morphology changes significantly.
氧化锡是一种众所周知的具有双价态的非化学计量材料。化学计量的不变性非常有趣。截至目前，尚无关于制备完美化学计量氧化锡的报道。在此，我们报告一种新颖的方法，通过改进已知的等离子体增强化学气相沉积技术，以SnCl₄·xH₂O作为前驱体，O₂作为反应气体，在300至800摄氏度的不同温度下制备化学计量的氧化锡。发现了沿[110]方向生长的SnO₂四方金红石结构。X射线光电子能谱测量显示Sn/O比恒定。发现Sn 3d和O 1s仅由具有相等峰宽的Sn⁴⁺（487.2 eV）和O - Sn⁴⁺（531.2 eV）组成。拉曼带强度（约633 cm⁻¹）随温度升高而增加，表明形态发生了变化。在300摄氏度下测得的薄层电阻约为0.5 kΩ，在600摄氏度时降至约0.1 kΩ。发现薄膜的化学计量保持不变，而结构形态发生了显著变化。
