Kim Young Soon, Ansari S G, Ansari Z A, Wahab Rizwan, Shin Hyung-Shik
School of Chemical Engineering, Chonbuk National University, Jeonju 561-756, South Korea.
Rev Sci Instrum. 2010 Nov;81(11):113903. doi: 10.1063/1.3498898.
This work presents a simple method to deposit palladium doped tin oxide (SnO(2)) thin films using modified plasma enhanced chemical vapor deposition as a function of deposition temperature at a radio frequency plasma power of 150 W. Stannic chloride (SnCl(4)) was used as precursor and oxygen (O(2), 100 SCCM) (SCCM denotes cubic centimeter per minute at STP) as reactant gas. Palladium hexafluroacetyleacetonate (Pd(C(5)HF(6)O(2))(2)) was used as a precursor for palladium. Fine granular morphology was observed with tetragonal rutile structure. A peak related to Pd(2)Sn is observed, whose intensity increases slightly with deposition temperature. Electrical resistivity value decreased from 8.6 to 0.9 mΩ cm as a function of deposition temperature from 400 to 600 °C. Photoelectron peaks related to Sn 3d, Sn 3p3, Sn 4d, O 1s, and C 1s were detected with varying intensities as a function of deposition temperature.
这项工作展示了一种简单的方法，即在150瓦射频等离子体功率下，利用改进的等离子体增强化学气相沉积法，根据沉积温度来沉积钯掺杂的氧化锡（SnO₂）薄膜。使用四氯化锡（SnCl₄）作为前驱体，氧气（O₂，100标准立方厘米每分钟）（标准立方厘米每分钟表示在标准温度和压力下每分钟的立方厘米数）作为反应气体。六氟乙酰丙酮钯（Pd(C₅HF₆O₂)₂）用作钯的前驱体。观察到具有四方金红石结构的细颗粒形态。观察到一个与Pd₂Sn相关的峰，其强度随沉积温度略有增加。随着沉积温度从400℃升高到600℃，电阻率值从8.6降低到0.9毫欧厘米。根据沉积温度的不同，检测到与Sn 3d、Sn 3p3、Sn 4d、O 1s和C 1s相关的光电子峰，其强度各不相同。
