Miroshnichenko Margarita L, Lebedinsky Alexander V, Chernyh N A, Tourova Tatyana P, Kolganova Tatyana V, Spring Stefan, Bonch-Osmolovskaya Elizaveta A
Winogradsky Institute of Microbiology, Russian Academy of Sciences, Prospect 60-Letiya Oktyabrya 7/2, 117312 Moscow, Russia.
Int J Syst Evol Microbiol. 2009 May;59(Pt 5):1040-4. doi: 10.1099/ijs.0.006072-0.
An extremely thermophilic, strictly anaerobic, facultatively chemolithoautotrophic bacterium designated strain DS(T) was isolated from Treshchinnyi Spring, one of the hottest springs of the Uzon Caldera (Kamchatka, Russia). Cells of the novel organism were Gram-negative rods, about 1.0-1.2 microm long and 0.5 microm wide. The temperature range for growth was 52-82 degrees C, with an optimum at 75 degrees C. Growth was observed at pH 6.8-7.4, and the optimum pH was 7.0-7.2. Strain DS(T) was able to grow lithoautotrophically with hydrogen in the presence of CO(2) as a carbon source and thiosulfate or elemental sulfur as an electron acceptor. It also grew well with ethanol, fumarate, succinate or malate in the presence of thiosulfate. Yeast extract was not required for growth and did not stimulate growth. The genomic DNA G+C content was 35.2 mol%. Phylogenetic analysis of the 16S rRNA gene sequence indicated that the novel organism was a member of the family Thermodesulfobacteriaceae. On the basis of phylogenetic and physiological considerations, it is proposed that strain DS(T) represents a new genus and species, Caldimicrobium rimae gen. nov., sp. nov. The type strain of Caldimicrobium rimae is DS(T) (=DSM 19393(T) =VKM B-2460(T)).
从俄罗斯堪察加半岛乌宗火山口最热门的温泉之一特列申尼伊温泉中分离出了一株极端嗜热、严格厌氧、兼性化能自养型细菌，命名为菌株DS(T)。该新菌株细胞为革兰氏阴性杆菌，长约1.0 - 1.2微米，宽0.5微米。生长温度范围为52 - 82℃，最适温度为75℃。在pH 6.8 - 7.4范围内可生长，最适pH为7.0 - 7.2。菌株DS(T)能够以氢气作为能源、二氧化碳作为碳源、硫代硫酸盐或单质硫作为电子受体进行自养生长。在硫代硫酸盐存在的情况下，它也能利用乙醇、富马酸盐、琥珀酸盐或苹果酸盐良好生长。生长不需要酵母提取物，酵母提取物也不会刺激其生长。基因组DNA的G + C含量为35.2摩尔%。对16S rRNA基因序列的系统发育分析表明，该新菌株是嗜热脱硫杆菌科的一个成员。基于系统发育和生理特征的考虑，建议将菌株DS(T)代表一个新的属和种，即裂沟热微菌属（Caldimicrobium rimae），新属，新种。裂沟热微菌的模式菌株为DS(T)（=DSM 19393(T)=VKM B - 2460(T)）。
