Yamao Takeshi, Kuriki Hirofumi, Miki Tomoharu, Hotta Shu
Department of Macromolecular Science and Engineering, Graduate School of Science and Technology, Kyoto Institute of Technology, Matsugasaki, Sakyo-ku, Kyoto 606-8585, Japan.
J Nanosci Nanotechnol. 2009 Jan;9(1):165-8. doi: 10.1166/jnn.2009.j093.
We have studied the FET device characteristics of the thiophene/phenylene co-oligomers chosen as organic semiconductors. The FET devices were made of two kinds of co-oligomer materials with different morphologies (i.e., the thin film and crystal). We show different device fabrication procedures depending upon the difference in the morphologies. The device characteristics were also investigated on various polymer gate insulators. The composite polymer gate insulators play an important role in achieving a good device performance. More specifically, the combination of poly(vinylphenol) and poly(methyl methacrylate) turned out very effective in attaining the pinch-off at larger drain voltages. This composite gate insulator is responsible for the steady device performance as well. A normal electrical feature is maintained under a reduced (or dry) pressure where conventional polymer gate FET devices did not function normally. The relevant results are evaluated and compared. The importance of the thiophene/phenylene co-oligomers as the nanomaterials (or nanomolecules) is briefly mentioned as well.
我们研究了被选作有机半导体的噻吩/亚苯基共聚物的场效应晶体管（FET）器件特性。FET器件由两种具有不同形态（即薄膜和晶体）的共聚物材料制成。根据形态差异，我们展示了不同的器件制造工艺。还研究了各种聚合物栅极绝缘体上的器件特性。复合聚合物栅极绝缘体在实现良好的器件性能方面起着重要作用。更具体地说，聚（乙烯基苯酚）和聚（甲基丙烯酸甲酯）的组合在较大漏极电压下实现夹断方面非常有效。这种复合栅极绝缘体也有助于保持器件性能的稳定。在减压（或干燥）压力下，器件保持正常的电学特性，而传统聚合物栅极FET器件在这种情况下无法正常工作。对相关结果进行了评估和比较。还简要提及了噻吩/亚苯基共聚物作为纳米材料（或纳米分子）的重要性。
