Yamao Takeshi, Akagami Hiroshi, Nishimoto Yoshihiro, Hotta Shu, Yoshida Yuji
Department of Macromolecular Science and Engineering, Graduate School of Science and Technology Kyoto Institute of Technology, Matsugasaki, Sakyo-ku, Kyoto 606-8585, Japan.
J Nanosci Nanotechnol. 2009 Nov;9(11):6271-6. doi: 10.1166/jnn.2009.1360.
We have improved performance of organic field-effect transistors (OFETs) composed of organic nanomolecular single crystals of a thiophene/phenylene co-oligomer. A poly(tetrafluoroethylene) thin layer was applied with friction-transfer technique to an insulator layer of silicon dioxide covering a silicon substrate. The crystals were grown in a liquid phase on the friction-transferred substrate such that the bottom-contact device was completed through depositing the crystals in firm contact with the premade metal electrodes. This technique ensures an excellent electrical contact between the crystal and the electrodes. The device shows the carrier mobility up to 0.26 cm2/Vs. The linear increase in the drain currents is clearly noted around the origin of the drain current-drain voltage action diagram. Thus we have achieved a high performance with the OFETs whose fabrication is based upon the friction-transfer technique.
我们提高了由噻吩/亚苯基共低聚物的有机纳米分子单晶组成的有机场效应晶体管（OFET）的性能。采用摩擦转移技术将聚四氟乙烯薄层施加到覆盖硅衬底的二氧化硅绝缘层上。在摩擦转移的衬底上进行液相晶体生长，通过沉积与预制金属电极紧密接触的晶体来完成底部接触器件。该技术确保了晶体与电极之间的良好电接触。该器件的载流子迁移率高达0.26 cm²/Vs。在漏极电流-漏极电压作用图的原点附近，漏极电流明显呈线性增加。因此，我们通过基于摩擦转移技术制造的OFET实现了高性能。
