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短期记忆可能是稳定的长时记忆痕迹模式的突触前神经递质囊泡的易释放池的耗尽。

Short term memory may be the depletion of the readily releasable pool of presynaptic neurotransmitter vesicles of a metastable long term memory trace pattern.

机构信息

, 18-11 Radburn Road, Fair Lawn, NJ, 07410, USA,

出版信息

Cogn Neurodyn. 2009 Sep;3(3):263-9. doi: 10.1007/s11571-009-9085-1. Epub 2009 May 30.

DOI:10.1007/s11571-009-9085-1
PMID:19484378
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC2727165/
Abstract

The Tagging/Retagging model of short term memory was introduced earlier (Tarnow in Cogn Neurodyn 2(4):347-353, 2008) to explain the linear relationship between response time and correct response probability for word recall and recognition: At the initial stimulus presentation the words displayed tag the corresponding long term memory locations. The tagging process is linear in time and takes about one second to reach a tagging level of 100%. After stimulus presentation the tagging level decays logarithmically with time to 50% after 14 s and to 20% after 220 s. If a probe word is reintroduced the tagging level has to return to 100% for the word to be properly identified, which leads to a delay in response time. This delay is proportional to the tagging loss. The tagging level is directly related to the probability of correct word recall and recognition. Evidence presented suggests that the tagging level is the level of depletion of the Readily Releasable Pool (RRP) of neurotransmitter vesicles at presynaptic terminals. The evidence includes the initial linear relationship between tagging level and time as well as the subsequent logarithmic decay of the tagging level. The activation of a short term memory may thus be the depletion of RRP (exocytosis) and short term memory decay may be the ensuing recycling of the neurotransmitter vesicles (endocytosis). The pattern of depleted presynaptic terminals corresponds to the long term memory trace.

摘要

早前介绍了短期记忆的标记/重标记模型(Tarnow 在 Cogn Neurodyn 2(4):347-353, 2008),以解释单词回忆和识别的反应时间和正确反应概率之间的线性关系:在初始刺激呈现时,单词会标记相应的长期记忆位置。标记过程在时间上是线性的,大约需要 1 秒钟才能达到 100%的标记水平。刺激呈现后,标记水平随时间以对数方式衰减,14 秒后衰减至 50%,220 秒后衰减至 20%。如果引入探针词,则标记水平必须回升到 100%,才能正确识别单词,这会导致反应时间延迟。这种延迟与标记损失成正比。标记水平与正确单词回忆和识别的概率直接相关。提供的证据表明,标记水平是突触前末梢易释放池(RRP)的神经递质囊泡耗竭的水平。证据包括标记水平与时间之间的初始线性关系以及随后的标记水平对数衰减。因此,短期记忆的激活可能是 RRP 的耗竭(胞吐作用),而短期记忆的衰减可能是随后神经递质囊泡的再循环(胞吞作用)。耗尽的突触前末梢模式与长期记忆痕迹相对应。

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本文引用的文献

1
Response probability and response time: a straight line, the Tagging/Retagging interpretation of short term memory, an operational definition of meaningfulness and short term memory time decay and search time.反应概率和反应时间:一条直线,短期记忆的标记/再标记解释,有意义性和短期记忆时间衰减以及搜索时间的操作定义。
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