Song Jaejin, Baek Seonghoon, Lee Heon, Lim Sangwoo
Department of Chemical Engineering, Yonsei University, Seoul 120-749, Korea.
J Nanosci Nanotechnol. 2009 Jun;9(6):3909-13. doi: 10.1166/jnn.2009.ns88.
Nano-imprint technology is one of the most advanced technologies for the fabrication of nano-size patterning. In this study, nano-imprint technology was used for the selective growth of ZnO nanowires on the Si wafer. When the poly methyl-methacrylate (PMMA) was first patterned by a nano-imprint process and ZnO seed layer was deposited and patterned by lift-off, ZnO nanowires were not vertically grown on the whole area of the patterned seed layer. Synthesis in zinc sulfate solution exhibited well-structured ZnO nanowires compared to the zinc nitrate solution, but uniformly aligned vertical growth of ZnO nanowires was not observed in either cases. On the other hand, when the PMMA was patterned using a nano-imprint process in the presence of seed layer, and ZnO nanowires were synthesized in zinc sulfate solution, selective growth of vertically aligned ZnO nanowires on 0.5 microm pattern sizes was achieved. The observation in this study suggests that the selective growth of ZnO nanowires on a defined pattern size can be obtained with the modification of pattering sequence and the control of low temperature hydrothermal synthesis of ZnO nanowires.
纳米压印技术是用于制造纳米尺寸图案的最先进技术之一。在本研究中，纳米压印技术用于在硅片上选择性生长氧化锌纳米线。当首先通过纳米压印工艺对聚甲基丙烯酸甲酯（PMMA）进行图案化，然后通过剥离沉积并图案化氧化锌种子层时，氧化锌纳米线并未在图案化种子层的整个区域垂直生长。与硝酸锌溶液相比，在硫酸锌溶液中合成的氧化锌纳米线结构良好，但在这两种情况下均未观察到氧化锌纳米线均匀排列的垂直生长。另一方面，当在存在种子层的情况下使用纳米压印工艺对PMMA进行图案化，并在硫酸锌溶液中合成氧化锌纳米线时，在0.5微米图案尺寸上实现了垂直排列的氧化锌纳米线的选择性生长。本研究中的观察结果表明，通过改变图案化顺序和控制氧化锌纳米线的低温水热合成，可以在限定的图案尺寸上实现氧化锌纳米线的选择性生长。
