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紫外纳米压印聚合物结构上氧化锌纳米线的水热生长

Hydrothermal Growth of ZnO Nanowires on UV-Nanoimprinted Polymer Structures.

作者信息

Park Sooyeon, Moore Sean A, Lee Jaejong, Song In-Hyouk, Farshchian Bahador, Kim Namwon

机构信息

Ingram School of Engineering, Texas State University, San Marcos, TX 78666-4684, USA.

Department of Engineering Technology, Texas State University, San Marcos, TX 78666-4684, USA.

出版信息

J Nanosci Nanotechnol. 2018 May 1;18(5):3686-3692. doi: 10.1166/jnn.2018.14668.

DOI:10.1166/jnn.2018.14668
PMID:29442884
Abstract

Integration of zinc oxide (ZnO) nanowires on miniaturized polymer structures can broaden its application in multi-functional polymer devices by taking advantages of unique physical properties of ZnO nanowires and recent development of polymer microstructures in analytical systems. In this paper, we demonstrate the hydrothermal growth of ZnO nanowires on polymer microstructures fabricated by UV nanoimprinting lithography (NIL) using a polyurethane acrylate (PUA). Since PUA is a siloxane-urethane-acrylate compound containing the alpha-hydroxyl ketone, UV-cured PUA include carboxyl groups, which inhibit and suppress the nucleation and growth of ZnO nanowires on polymer structures. The presence of carboxyl groups in UV-cured PUA was substantiated by Fourier transform infrared spectroscopy (FTIR), and a Ag thin film was deposited on the nanoimprinted polymer structures to limit their inhibitive influence on the growth of ZnO nanowires. Furthermore, the naturally oxidized Ag layer (Ag2O) reduced crystalline lattice mismatches at the interface between ZnO-Ag during the seed annealing process. The ZnO nanowires grown on the Ag-deposited PUA microstructures were found to have comparable morphological characteristics with ZnO nanowires grown on a Si wafer.

摘要

通过利用氧化锌(ZnO)纳米线独特的物理性质以及聚合物微结构在分析系统中的最新发展,将ZnO纳米线集成到小型化聚合物结构上,可以拓宽其在多功能聚合物器件中的应用。在本文中,我们展示了使用聚氨酯丙烯酸酯(PUA)通过紫外纳米压印光刻(NIL)制造的聚合物微结构上ZnO纳米线的水热生长。由于PUA是一种含有α-羟基酮的硅氧烷-聚氨酯-丙烯酸酯化合物,紫外固化的PUA含有羧基,这些羧基会抑制和阻碍ZnO纳米线在聚合物结构上的成核和生长。通过傅里叶变换红外光谱(FTIR)证实了紫外固化PUA中羧基的存在,并且在纳米压印的聚合物结构上沉积了一层银薄膜,以限制它们对ZnO纳米线生长的抑制作用。此外,自然氧化的银层(Ag2O)在种子退火过程中减少了ZnO-Ag界面处的晶格失配。发现在沉积有银的PUA微结构上生长的ZnO纳米线与在硅片上生长的ZnO纳米线具有可比的形态特征。

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