Ham Jinhee, Shim Wooyoung, Kim Do Hyun, Lee Seunghyun, Roh Jongwook, Sohn Sung Woo, Oh Kyu Hwan, Voorhees Peter W, Lee Wooyoung
Department of Materials Science and Engineering, Yonsei University, 134 Shinchon, Seoul 120-749, Korea, Department of Materials Science and Engineering, Seoul National University, Seoul 151-744, Korea, and Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208.
Nano Lett. 2009 Aug;9(8):2867-72. doi: 10.1021/nl9010518.
Bismuth telluride (Bi(2)Te(3)) nanowires are of great interest as nanoscale building blocks for high-efficiency thermoelectric devices. Their low-dimensional character leads to an enhanced figure-of-merit (ZT), an indicator of thermoelectric efficiency. Herein, we report the invention of a direct growth method termed On-Film Formation of Nanowires (OFF-ON) for making high-quality single-crystal compound semiconductor nanowires, that is, Bi(2)Te(3), without the use of conventional templates, catalysts, or starting materials. We have used the OFF-ON technique to grow single crystal compound semiconductor Bi(2)Te(3) nanowires from sputtered BiTe films after thermal annealing at 350 degrees C. The mechanism for wire growth is stress-induced mass flow along grain boundaries in the polycrystalline film. OFF-ON is a simple but powerful method for growing perfect single-crystal compound semiconductor nanowires of high aspect ratio with high crystallinity that distinguishes it from other competitive growth approaches that have been developed to date.
碲化铋（Bi(2)Te(3)）纳米线作为高效热电器件的纳米级构建块备受关注。它们的低维特性导致优值（ZT）提高，而优值是热电效率的一个指标。在此，我们报告了一种称为纳米线膜上形成法（OFF-ON）的直接生长方法的发明，该方法用于制造高质量的单晶化合物半导体纳米线，即Bi(2)Te(3)，无需使用传统模板、催化剂或起始材料。我们使用OFF-ON技术在350℃热退火后从溅射的BiTe薄膜中生长出单晶化合物半导体Bi(2)Te(3)纳米线。线生长的机制是应力诱导的质量流沿着多晶薄膜中的晶界流动。OFF-ON是一种简单但强大的方法，用于生长具有高纵横比和高结晶度的完美单晶化合物半导体纳米线，这使其有别于迄今已开发的其他竞争性生长方法。
