Lee Wonjoo, Kang Soon Hyung, Kim Jae-Yup, Kolekar Govind B, Sung Yung-Eun, Han Sung-Hwan
Department of Chemistry, Hanyang University, Haengdang-dong 17, Sungdong-ku, Seoul 133-791, Korea.
Nanotechnology. 2009 Aug 19;20(33):335706. doi: 10.1088/0957-4484/20/33/335706. Epub 2009 Jul 28.
This paper reports the formation of a thin ZnO energy barrier between a CdSe quantum dot (Q dots) sensitizer and TiO2 nanotubes (TONTs) for improved current efficiency of Q dot-sensitized solar cells. The formation of a ZnO barrier between TONTs and the Q dot sensitizer increased the short-circuit current under illumination and also reduced the dark current in a dark environment. The power conversion efficiency of Q dot-sensitized TONT solar cells increased by 25.9% in the presence of the ZnO thin layer due to improved charge-collecting efficiency and reduced recombination.
本文报道了在CdSe量子点（Q点）敏化剂与TiO2纳米管（TONTs）之间形成薄ZnO能量势垒，以提高Q点敏化太阳能电池的电流效率。TONTs与Q点敏化剂之间ZnO势垒的形成增加了光照下的短路电流，同时也降低了黑暗环境中的暗电流。由于电荷收集效率提高和复合减少，在存在ZnO薄层的情况下，Q点敏化TONT太阳能电池的功率转换效率提高了25.9%。
