Department of Nuclear and Quantum Engineering, Korea Advanced Institute of Science and Technology (KAIST), 373-1 Guseong, Yuseong, Daejeon 305-701, Republic of Korea.
Nanoscale Res Lett. 2011 Jul 21;6(1):462. doi: 10.1186/1556-276X-6-462.
We improve the conversion efficiency of Ag2S quantum dot (QD)-sensitized TiO2 nanotube-array electrodes by chemically depositing ZnO recombination barrier layer on plain TiO2 nanotube-array electrodes. The optical properties, structural properties, compositional analysis, and photoelectrochemistry properties of prepared electrodes have been investigated. It is found that for the prepared electrodes, with increasing the cycles of Ag2S deposition, the photocurrent density and the conversion efficiency increase. In addition, as compared to the Ag2S QD-sensitized TiO2 nanotube-array electrode without the ZnO layers, the conversion efficiency of the electrode with the ZnO layers increases significantly due to the formation of efficient recombination layer between the TiO2 nanotube array and electrolyte.
我们通过在普通 TiO2 纳米管阵列电极上化学沉积 ZnO 复合阻碍层来提高 Ag2S 量子点（QD）敏化 TiO2 纳米管阵列电极的能量转换效率。对制备的电极的光学性质、结构性质、组成分析和光电化学性质进行了研究。结果发现，对于制备的电极，随着 Ag2S 沉积循环次数的增加，光电流密度和能量转换效率增加。此外，与没有 ZnO 层的 Ag2S QD 敏化 TiO2 纳米管阵列电极相比，由于 TiO2 纳米管阵列和电解质之间形成了有效的复合层，具有 ZnO 层的电极的能量转换效率显著提高。
