Phipps C R, Thomas S J
Opt Lett. 1977 Sep 1;1(3):93-5. doi: 10.1364/ol.1.000093.
Observed bleaching of single-crystal p-type germanium in the 10-microm region obeys an inhomogeneous broadening model for input intensities up to 100 times the saturation intensity I(s). Bleaching measurements show that I(s) varies from about 3.2 MW cm(-2) at 10.59 microm to about 6.8 MW cm(-2) at 9.27 microm. No significant variation of I(s) with crystal orientation is seen. Applications to CO(2) laser system isolation are discussed.
在10微米区域观察到的单晶p型锗的漂白现象，对于高达饱和强度I(s) 100倍的输入强度，遵循非均匀展宽模型。漂白测量表明，I(s) 从10.59微米处的约3.2兆瓦/平方厘米变化到9.27微米处的约6.8兆瓦/平方厘米。未观察到I(s) 随晶体取向的显著变化。讨论了其在CO₂激光系统隔离中的应用。
