Young P A
Appl Opt. 1971 Mar 1;10(3):638-43. doi: 10.1364/AO.10.000638.
The absorption coefficient of 50-Omega cm germanium was measured over the 400-2000 cm(-1) wavenumber region for temperatures from 300 K to 450 K. Lattice absorption is negligible for wavenumbers greater than 900 cm(-1); at a wavelength of 10.6 microm the absorption is due entirely to free carrier effects. The thermal runaway characteristics of germanium windows on a CO(2) laser, operating at 10.6 microm, were studied. For each cooling mechanism used there was a well-defined critical value of power density (P(c)), below which the germanium temperature stabilized and above which runaway occurred. The highest value of P(c), obtained was 88 W cm(-2), by cooling the germanium below ambient.
在300 K至450 K的温度范围内，测量了50-Ω·cm锗在400 - 2000 cm⁻¹波数区域的吸收系数。对于波数大于900 cm⁻¹的情况，晶格吸收可忽略不计；在波长为10.6微米时，吸收完全归因于自由载流子效应。研究了工作在10.6微米的二氧化碳激光器上锗窗口的热失控特性。对于所使用的每种冷却机制，都存在一个明确的功率密度临界值（P(c)），低于该值时锗温度稳定，高于该值时则发生热失控。通过将锗冷却至环境温度以下，获得的P(c)最高值为88 W/cm²。
