太赫兹波对半导体合金 AlInN 的特性研究：负虚电导率及其意义。

Terahertz characterization of semiconductor alloy AlInN: negative imaginary conductivity and its meaning.

机构信息

Department of Electrical and Electronics Engineering, Graduate School of Engineering, University of Fukui,Bunkyo 3-9-1, Fukui 910-8507, Japan.

出版信息

Opt Lett. 2009 Aug 15;34(16):2507-9. doi: 10.1364/ol.34.002507.

DOI:10.1364/ol.34.002507

PMID:19684831

Abstract

Through terahertz time-domain spectroscopy, negative imaginary conductivity is observed in In-rich AlInN film grown by metal-organic chemical-vapor deposition for frequencies from 0.2 to 2.0 THz. This non-Drude behavior is explained based on the electron back-scattering theory of Smith [Phys. Rev. B65, 115206 (2002)]. Comparing with binary semiconductor InN, potential fluctuations produced by composition inhomogeneity and alloy scattering of carriers make In-rich AlInN alloy easier to be subjected to non-Drude behavior in electrical performance.

摘要

通过太赫兹时域光谱技术，在由金属有机化学气相沉积法生长的富铟 AlInN 薄膜中观察到了频率在 0.2 到 2.0 THz 范围内的负虚电导率。这种非 Drude 行为基于 Smith 的电子背散射理论[Phys. Rev. B65, 115206 (2002)]得到了解释。与二元半导体 InN 相比，由成分不均匀和载流子的合金散射产生的位势起伏使得富铟 AlInN 合金在电性能方面更容易表现出非 Drude 行为。