Lin Pei-Yin, Chen Jr-Yu, Shih Yi-Sen, Chang Li
Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan.
Nanoscale Res Lett. 2014 Nov 23;9(1):628. doi: 10.1186/1556-276X-9-628. eCollection 2014.
The attractive prospect for AlInN/GaN-based devices for high electron mobility transistors with advanced structure relies on high-quality AlInN epilayer. In this work, we demonstrate the growth of high-quality Al-rich AlInN films deposited on c-plane GaN substrate by metal-organic chemical vapor deposition. X-ray diffraction, scanning electron microscopy, and scanning transmission electron microscopy show that the films lattice-matched with GaN can have a very smooth surface with good crystallinity and uniform distribution of Al and In in AlInN.
基于AlInN/GaN的具有先进结构的高电子迁移率晶体管器件的诱人前景依赖于高质量的AlInN外延层。在这项工作中，我们展示了通过金属有机化学气相沉积在c面GaN衬底上沉积高质量富铝AlInN薄膜的过程。X射线衍射、扫描电子显微镜和扫描透射电子显微镜表明，与GaN晶格匹配的薄膜可以具有非常光滑的表面、良好的结晶度以及AlInN中Al和In的均匀分布。
