Wang Miao, Chang Kai, Wang L G, Dai Ning, Peeters F M
SKLSM, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, People's Republic of China.
Nanotechnology. 2009 Sep 9;20(36):365202. doi: 10.1088/0957-4484/20/36/365202. Epub 2009 Aug 18.
We investigate theoretically the charge and spin transport in quantum wires grown along different crystallographic planes in the presence of the Rashba spin-orbit interaction (RSOI) and the Dresselhaus spin-orbit interaction (DSOI). We find that changing the crystallographic planes leads to a variation of the anisotropy of the conductance due to a different interplay between the RSOI and DSOI, since the DSOI is induced by bulk inversion asymmetry, which is determined by crystallographic plane. This interplay depends sensitively on the crystallographic planes, and consequently leads to the anisotropic charge and spin transport in quantum wires embedded in different crystallographic planes.
我们从理论上研究了在存在Rashba自旋轨道相互作用(RSOI)和Dresselhaus自旋轨道相互作用(DSOI)的情况下,沿不同晶面生长的量子线中的电荷和自旋输运。我们发现,由于RSOI和DSOI之间不同的相互作用,改变晶面会导致电导率各向异性的变化,因为DSOI是由体反演不对称性引起的,而体反演不对称性由晶面决定。这种相互作用对晶面敏感地依赖,因此导致嵌入不同晶面的量子线中电荷和自旋的各向异性输运。