Institute for Experimental and Applied Physics, University of Regensburg, Universitatsstrasse 31, D-93053 Regensburg, Germany.
Nano Lett. 2009 Nov;9(11):3860-6. doi: 10.1021/nl9020717.
GaAs/GaMnAs core-shell nanowires were grown by molecular beam epitaxy. The core GaAs nanowires were synthesized under typical nanowire growth conditions using gold as catalyst. For the GaMnAs shell the temperature was drastically reduced to achieve low-temperature growth conditions known to be crucial for high-quality GaMnAs. The GaMnAs shell grows epitaxially on the side facets of the core GaAs nanowires. A ferromagnetic transition temperature of 20 K is obtained. Magnetic anisotropy studies indicate a magnetic easy axis parallel to the nanowire axis.
砷化镓/砷化锰镓核壳纳米线通过分子束外延生长而成。在使用金作为催化剂的典型纳米线生长条件下合成了核心的砷化镓纳米线。对于砷化锰镓壳，温度大幅降低，以实现低温生长条件，低温生长条件对于高质量的砷化锰镓至关重要。砷化锰镓壳在核心的砷化镓纳米线的侧面对称外延生长。获得了 20 K 的铁磁转变温度。磁各向异性研究表明，磁易轴平行于纳米线轴。
