InP:Fe中光折变二波混频的共振强度依赖性模型。

Model for resonant intensity dependence of photorefractive two-wave mixing in InP:Fe.

作者信息

Picoli G, Gravey P, Ozkul C

出版信息

Opt Lett. 1989 Dec 15;14(24):1362-4. doi: 10.1364/ol.14.001362.

DOI:10.1364/ol.14.001362

PMID:19759683

Abstract

We present a new model, which incorporates both temperature and electron-hole effects, for two-beam coupling in photorefractive semiconductors under an external dc field E(0). We show that the exponential gain ? exhibits an intensity-dependent resonance. The application of this model to InP:Fe allows us to predict a value of ? near 20 cm(-1) for a thin sample at 1.06 microm with E(0) = 10 kV/cm.

摘要

我们提出了一种新模型，该模型结合了温度和电子 - 空穴效应，用于描述在外部直流电场E(0)作用下光折变半导体中的双光束耦合。我们表明，指数增益γ表现出强度依赖的共振特性。将该模型应用于InP:Fe，使我们能够预测在1.06微米波长下，对于厚度较薄的样品，当E(0) = 10 kV/cm时，γ的值接近20 cm⁻¹。