Chauvet M, Hervé D, Mainguet B, Rébéjac B, Salaün S, Corre A L, Viallet J E
Opt Lett. 1995 Aug 1;20(15):1604-6. doi: 10.1364/ol.20.001604.
Two semiconductor single-mode waveguides have been fabricated to study the photorefractive effect in epilayers grown on an InP:Fe substrate. The first experimental results obtained in these structures are reported. At 1.55-microm wavelength, a 0.53-cm(-1) gain is observed in contradirectional two-wave mixing and a 4-cm(-1) gain is measured in codirectional two-wave mixing with a 5.7-kV/cm applied field. The gain dependence versus the light intensity and the applied field is also discussed.
已制备了两个半导体单模波导,用于研究在InP:Fe衬底上生长的外延层中的光折变效应。报道了在这些结构中获得的首批实验结果。在1.55微米波长下,在反向双波混频中观察到0.53厘米⁻¹的增益,在同向双波混频中,当施加5.7千伏/厘米的电场时,测得4厘米⁻¹的增益。还讨论了增益与光强和外加电场的关系。