直流电场下热稳定的InP:Fe晶体中的高增益相干放大。
High gain coherent amplification in thermally stabilized InP:Fe crystals under dc fields.
作者信息
Ozkul C, Picoli G, Gravey P, Wolffer N
出版信息
Appl Opt. 1990 Jun 20;29(18):2711-7. doi: 10.1364/AO.29.002711.
After recalling the principal results of the theory of two-wave mixing gain enhancement in photorefractive InP:Fe crystals under a dc field, we report on experiments performed with several samples manufactured at CNET. For the first time, we believe, a maximum gain of 11.4 cm(-1) has been obtained under an applied dc field of 10 kV/cm in a thermally stablized crystal (T = 290 K) at lambda = 1.06 microm. In spite of a decrease in the factor n(3)r(eff)/lambda high gains (Gamma >/= 5 cm(-1)) have been achieved at lambda = 1.32microm in thick crystals. These experimental results are in good agreement with theoretical predictions.
在回顾了光折变InP:Fe晶体在直流电场下两波混频增益增强理论的主要结果之后，我们报告了用法国国家电信研究中心制造的几个样品所进行的实验。我们相信，首次在温度稳定的晶体（T = 290 K）中，于10 kV/cm的外加直流电场下，在波长λ = 1.06微米处获得了11.4 cm⁻¹的最大增益。尽管n₃rₑff/λ因子有所下降，但在厚晶体中于波长λ = 1.32微米处仍实现了高增益（Γ≥5 cm⁻¹）。这些实验结果与理论预测吻合得很好。
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