Stevens-Kalceff Marion A
School of Physics & Electron Microscope Unit, University of New South Wales, Sydney, NSW 2052 Australia.
Microsc Microanal. 2004 Dec;10(6):797-803. doi: 10.1017/s1431927604040152.
Kelvin probe microscopy (KPM) is a specialized atomic force microscopy technique in which long-range Coulomb forces between a conductive atomic force probe and a specimen enable the electrical potential at the surface of a specimen to be characterized with high spatial resolution. KPM has been used to characterize nonconductive materials following their exposure to stationary electron beam irradiation in a scanning electron microscope (SEM). Charged beam irradiation of poorly conducting materials results in the trapping of charge at either preexisting or irradiation-induced defects. The reproducible characteristic surface potentials associated with the trapped charge have been mapped using KPM. Potential profiles are calculated and compared with observed potential profiles giving insight into the charging processes and residual trapped charge distributions.
开尔文探针显微镜（KPM）是一种特殊的原子力显微镜技术，其中导电原子力探针与样品之间的长程库仑力能够以高空间分辨率表征样品表面的电势。KPM已被用于在扫描电子显微镜（SEM）中对非导电材料进行静态电子束辐照后进行表征。对导电性差的材料进行带电束辐照会导致电荷在预先存在的或辐照诱导的缺陷处捕获。已使用KPM绘制了与捕获电荷相关的可重复特征表面电势。计算电势分布并将其与观察到的电势分布进行比较，从而深入了解充电过程和残余捕获电荷分布。
