Sohn Jung Inn, Joo Heung Jin, Ahn Docheon, Lee Hyun Hwi, Porter Alexandra E, Kim Kinam, Kang Dae Joon, Welland Mark E
Nanoscience Centre, University of Cambridge, Cambridge CB3 0FF, United Kingdom.
Nano Lett. 2009 Oct;9(10):3392-7. doi: 10.1021/nl900841k.
We demonstrate that the Mott metal-insulator transition (MIT) in single crystalline VO(2) nanowires is strongly mediated by surface stress as a consequence of the high surface area to volume ratio of individual nanowires. Further, we show that the stress-induced antiferromagnetic Mott insulating phase is critical in controlling the spatial extent and distribution of the insulating monoclinic and metallic rutile phases as well as the electrical characteristics of the Mott transition. This affords an understanding of the relationship between the structural phase transition and the Mott MIT.
我们证明，由于单个纳米线的高表面积与体积比，单晶VO(2)纳米线中的莫特金属-绝缘体转变（MIT）受到表面应力的强烈介导。此外，我们表明，应力诱导的反铁磁莫特绝缘相对于控制绝缘单斜相和金属金红石相的空间范围和分布以及莫特转变的电学特性至关重要。这有助于理解结构相变与莫特MIT之间的关系。
