Applied Physics Program, Rice Quantum Institute, and Department of Bioengineering, Rice University, 6100 Main St., Houston, TX 77005, USA.
Small. 2009 Dec;5(24):2910-5. doi: 10.1002/smll.200901100.
Voltage-controlled resistive switching in various gap systems on SiO2 substrates is reported. The nanoscale-sized gaps are made by several means using different materials including metals, semiconductors, and amorphous carbon. The switching site is further reduced in size by using multiwalled carbon nanotubes and single-walled carbon nanotubes. The switching in all the gap systems shares the same characteristics. This independence of switching on the material compositions of the electrodes, accompanied by observable damage to the SiO2 substrate at the gap region, bespeaks the intrinsic switching from post-breakdown SiO2. It calls for caution when studying resistive switching in nanosystems on oxide substrates, since oxide breakdown extrinsic to the nanosystem can mimic resistive switching. Meanwhile, the high ON/OFF ratio (approximately 10(5)), fast switching time (2 micros, tested limit), and durable cycles show promising memory properties. The observed intermediate states reveal the filamentary nature of the switching.
报告了在 SiO2 衬底上的各种间隙系统中的电压控制电阻开关。使用包括金属、半导体和非晶碳在内的不同材料，通过几种方法来制造纳米级大小的间隙。通过使用多壁碳纳米管和单壁碳纳米管，进一步减小了开关的尺寸。所有间隙系统的开关都具有相同的特性。这种开关对电极材料成分的独立性，伴随着在间隙区域观察到的 SiO2 衬底的可观察到的损坏，表明了源自击穿后 SiO2 的固有开关。在研究氧化物衬底上的纳米系统中的电阻开关时需要小心，因为纳米系统之外的氧化物击穿可以模拟电阻开关。同时，高导通/关断比（约 10^5）、快速开关时间（2 微秒，测试极限）和耐用的循环显示出有前途的存储性能。观察到的中间状态揭示了开关的丝状性质。
