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表面修饰的硅纳米线:通往高热电优值材料的途径。

Surface-decorated silicon nanowires: a route to high-ZT thermoelectrics.

作者信息

Markussen Troels, Jauho Antti-Pekka, Brandbyge Mads

机构信息

Department of Micro- and Nanotechnology, Technical University of Denmark, DTU Nanotech, DK-2800 Kongens Lyngby, Denmark.

出版信息

Phys Rev Lett. 2009 Jul 31;103(5):055502. doi: 10.1103/PhysRevLett.103.055502.

Abstract

Based on atomistic calculations of electron and phonon transport, we propose to use surface-decorated silicon nanowires for thermoelectric applications. Two examples of surface decorations are studied to illustrate the underlying ideas: nanotrees and alkyl functionalized silicon nanowires. For both systems we find (i) that the phonon conductance is significantly reduced compared to the electronic conductance leading to high thermoelectric figure of merit ZT, and (ii) for ultrathin wires, surface decoration leads to significantly better performance than surface disorder.

摘要

基于电子和声子输运的原子尺度计算,我们提议将表面修饰的硅纳米线用于热电应用。研究了两种表面修饰的例子以阐明其基本思想:纳米树和烷基功能化硅纳米线。对于这两种体系,我们发现:(i)与电子电导相比,声子电导显著降低,从而导致高的热电优值ZT;(ii)对于超薄导线,表面修饰比表面无序导致显著更好的性能。

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