Technische Physik, Physikalisches Institut, Wilhelm Conrad Röntgen Research Center for Complex Material Systems, Universität Würzburg, Würzburg, Germany.
Nanotechnology. 2009 Oct 28;20(43):434012. doi: 10.1088/0957-4484/20/43/434012. Epub 2009 Oct 2.
Results obtained by an advanced growth of site-controlled quantum dots (SCQDs) on pre-patterned nanoholes and their integration into both photonic resonators and nanoelectronic memories are summarized. A specific technique has been pursued to improve the optical quality of single SCQDs. Quantum dot (QD) layers have been vertically stacked but spectrally detuned for single SCQD studies. Thereby, the average emission linewidth of single QDs could be reduced from 2.3 meV for SCQDs in a first QD layer close to the etched nanoholes down to 600 microeV in the third InAs QD layer. Accurate SCQD nucleation on large QD distances is maintained by vertical strain induced QD coupling throughout the QD stacks. Record narrow linewidths of individual SCQDs down to approximately 110 microeV have been obtained. Experiments performed on coupled photonic SCQD-resonator devices show an enhancement of spontaneous emission. SCQDs have also been integrated deterministically in high electron mobility heterostructures and flash memory operation at room temperature has been observed.
总结了在预图案化纳米孔上通过先进的点控制量子点（SCQDs）生长及其集成到光子谐振器和纳米电子存储器中的结果。已经采用了一种特殊技术来提高单个 SCQD 的光学质量。量子点（QD）层已垂直堆叠，但为了进行单个 SCQD 研究而进行了光谱调谐。因此，单个 QD 的平均发射线宽可以从靠近蚀刻纳米孔的第一层 SCQDs 的 2.3 meV 降低到第三层 InAs QD 层的 600 微电子伏特。通过整个 QD 堆叠中的垂直应变诱导 QD 耦合，可以保持在大 QD 距离上的精确 SCQD 成核。已经获得了单个 SCQD 的记录窄线宽，低至约 110 微电子伏特。在耦合的光子 SCQD-谐振器器件上进行的实验显示了自发发射的增强。SCQDs 也已在高电子迁移率异质结构中进行了确定性集成，并且已经观察到在室温下的闪存操作。
