镓对 0.65（Bi0.94La0.06）（Ga(x)Fe(1-x))O3-0.35PbTiO3 陶瓷结构和电学性能的影响。

Effects of gallium on the structure and electrical properties of 0.65 (Bi0.94La0.06) (Ga(x)Fe(1-x))O3-0.35PbTiO3 ceramics.

机构信息

School of Material Science and Engineering, Shanghai University, Shanghai, 200072, China.

出版信息

IEEE Trans Ultrason Ferroelectr Freq Control. 2009 Sep;56(9):1826-30. doi: 10.1109/TUFFC.2009.1256.

DOI:10.1109/TUFFC.2009.1256

PMID:19811983

Abstract

Crystalline solutions of 0.65 Bi(0.94)La(0.06)) (Ga(x)Fe(1-x))O(3)-0.35PbTiO(3) Ceramics (BLGF-PT) for x = 0 and 0.05 have been fabricated by the solid-state reaction method. X-ray diffraction (XRD) was utilized to characterize the crystal structure and examine any possible impurities existing in the ceramics. The effects of Ga substitution on dielectric properties of the samples were studied at frequencies from 10(2) to 10(6) Hz over a temperature range from 20 to 620 degrees C. The results indicate that Ga modification can reduce the room temperature dielectric loss. The conduction mechanism of the material was investigated using ac conductivity. It is concluded that electrons originating from Fe(2+) and oxygen ion vacancies are the main charge carriers, and Ga doping could decrease the electronic conduction effectively. The frequency dependence of ac conductivity was found to follow Jonscher's universal power law.

摘要

采用固相反应法制备了 0.65Bi(0.94)La(0.06))(Ga(x)Fe(1-x))O(3)-0.35PbTiO(3)（BLGF-PT）（x=0 和 0.05）的晶体溶液。利用 X 射线衍射（XRD）对陶瓷的晶体结构和可能存在的杂质进行了表征。在 20 至 620°C 的温度范围内，研究了 Ga 取代对样品介电性能的影响，频率范围从 10(2)到 10(6)Hz。结果表明，Ga 改性可以降低室温介电损耗。采用交流电导率研究了材料的导电机理。得出结论，源于 Fe(2+)和氧离子空位的电子是主要的载流子，Ga 掺杂可以有效地降低电子传导。发现交流电导率的频率依赖性符合 Jonscher 的普遍幂律。