BIOS Lab on a Chip Group, University of Twente, Enschede, The Netherlands.
ACS Nano. 2009 Nov 24;3(11):3485-92. doi: 10.1021/nn901220g.
We report a new low-cost top-down silicon nanowire fabrication technology requiring only conventional microfabrication processes including microlithography, oxidation, and wet anisotropic plane-dependent etching; high quality silicon nanowire arrays can be easily made in any conventional microfabrication facility without nanolithography or expensive equipment. Silicon nanowires with scalable lateral dimensions ranging from 200 nm down to 10-20 nm and lengths up to approximately 100 microm can be precisely formed with near-perfect monocrystalline cross sections, atomically smooth surfaces, and wafer-scale yields greater than 90% using a novel size reduction method where silicon nanowires can be controllably scaled to any dimension and doping concentration independent of large contacting regions from a continuous layer of crystalline silicon.
我们报告了一种新的低成本自上而下的硅纳米线制造技术，只需要传统的微制造工艺，包括光刻、氧化和各向异性湿法平面刻蚀；在没有纳米光刻或昂贵设备的情况下，任何常规的微制造设施都可以轻松制造高质量的硅纳米线阵列。使用一种新颖的尺寸缩小方法，可以精确地形成具有可扩展的横向尺寸（从 200nm 缩小到 10-20nm）和高达约 100 微米的长度的近完美单晶横截面、原子平滑表面的硅纳米线，并且具有 90%以上的晶圆级产量，该方法中硅纳米线可以独立于大接触区域，从连续的晶体硅层可控地缩小到任何尺寸和掺杂浓度。
