Hewlett-Packard Labs, 1501 Page Mill Road, Palo Alto, CA 94304, USA.
Nanotechnology. 2009 Dec 2;20(48):485701. doi: 10.1088/0957-4484/20/48/485701. Epub 2009 Oct 30.
We used spatially-resolved NEXAFS (near-edge x-ray absorption fine structure) spectroscopy coupled with microscopy to characterize the electronic, structural and chemical properties of bipolar resistive switching devices. Metal/TiO2/metal devices were electroformed with both bias polarities and then physically opened to study the resulting material changes within the device. Soft x-ray absorption techniques allowed isolated study of the different materials present in the device with 100 nm spatial resolution. The resulting morphology and structural changes reveal a picture of localized polarity-independent heating occurring within these devices initiated by and subsequently accelerating polarity-dependent electrochemical reduction/oxidation processes.
我们使用空间分辨近边 X 射线吸收精细结构（NEXAFS）光谱学结合显微镜来表征双极性电阻开关器件的电子、结构和化学性质。金属/TiO2/金属器件在两种偏压下进行电成形，然后进行物理打开以研究器件内的材料变化。软 X 射线吸收技术允许对器件中不同材料进行 100nm 空间分辨率的孤立研究。所得形貌和结构变化揭示了这样一个画面：在这些器件中，局部的、与极性无关的加热是由随后加速的、与极性相关的电化学还原/氧化过程引发的。
