Institute of Physics Polish Academy of Sciences, Al. Lotników 32/46 02-668 Warsaw, Poland.
J Microsc. 2009 Nov;236(2):115-8. doi: 10.1111/j.1365-2818.2009.03255.x.
The structure of GaMnAs nanowires (NW) with nominal Mn concentration of up to 7 at% was investigated by transmission electron microscopy. The (Ga,Mn)As NW were grown on epiready GaAs(001) n-type wafers by molecular beam epitaxy. The crystal structure of the NW was determined to be zinc-blende. NW with Mn concentrations lower than 5 at% grow along the 111 direction. NW with higher Mn concentrations grow along the 110 direction and reveal a branching structure. The main nanowire and branches grow along the 110 directions belonging to only one {111} plane.
采用透射电子显微镜研究了名义锰浓度高达 7 原子%的 GaMnAs 纳米线（NW）的结构。（Ga，Mn）As NW 通过分子束外延在 epiready GaAs（001）n 型晶片上生长。NW 的晶体结构被确定为闪锌矿。Mn 浓度低于 5 原子%的 NW 沿 111 方向生长。Mn 浓度较高的 NW 沿 110 方向生长，并呈现出分支结构。主要的纳米线和分支沿属于单个{111}面的 110 方向生长。
