Institut d'Electronique de Microélectronique et de Nanotechnologie, UMR CNRS 8520, Villeneuve d'Ascq, France.
Nanotechnology. 2010 Sep 24;21(38):385602. doi: 10.1088/0957-4484/21/38/385602. Epub 2010 Aug 27.
We report growth by molecular beam epitaxy and structural characterization of gallium-nucleated GaAs nanowires on silicon. The influences of growth temperature and V/III ratio are investigated and compared in the case of oxide-covered and oxide-free substrates. We demonstrate a precise positioning process for Ga-nucleated GaAs nanowires using a hole array in a dielectric layer thermally grown on silicon. Crystal quality is analyzed by high resolution transmission electron microscopy. Crystal structure evolves from pure zinc blende to pure wurtzite along a single nanowire, with a transition region.
我们通过分子束外延法实现了硅衬底上的 Ga 核 GaAs 纳米线的生长，并对其结构进行了表征。在有/无氧化物覆盖层的情况下，我们研究并比较了生长温度和 V/III 比对其的影响。我们利用在硅上热生长的介电层中的孔阵列，实现了 Ga 核 GaAs 纳米线的精确定位过程。通过高分辨率透射电子显微镜分析了晶体质量。晶体结构沿着单根纳米线从纯闪锌矿相逐渐演变为纯纤锌矿相，存在一个过渡区域。
