Vicaro K O, Gutiérrez H R, Seabra A C, Schulz P A, Cotta M A
Instituto de Fisica Gleb Wataghin, CP 6165, Universidade Estadual de Campinas-UNICAMP, 13083-970, Campinas, SP, Brazil.
J Nanosci Nanotechnol. 2009 Nov;9(11):6390-5. doi: 10.1166/jnn.2009.1308.
In this work we explore the noise characteristics in lithographically-defined two terminal devices containing self-assembled InAs/InP quantum dots. The experimental ensemble of InAs dots show random telegraph noise (RTN) with tuneable relative amplitude-up to 150%-in well defined temperature and source-drain applied voltage ranges. Our numerical simulation indicates that the RTN signature correlates with a very low number of quantum dots acting as effective charge storage centres in the structure for a given applied voltage. The modulation in relative amplitude variation can thus be associated to the altered electrostatic potential profile around such centres and enhanced carrier scattering provided by a charged dot.
在这项工作中，我们探究了包含自组装InAs/InP量子点的光刻定义的两终端器件中的噪声特性。InAs量子点的实验总体在明确的温度和源漏施加电压范围内呈现出相对幅度可调（高达150%）的随机电报噪声（RTN）。我们的数值模拟表明，对于给定的施加电压，RTN特征与结构中作为有效电荷存储中心的极少数量子点相关。因此，相对幅度变化中的调制可与这些中心周围改变的静电势分布以及带电量子点提供的增强的载流子散射相关联。
