Lee Byoung H, Lee Kwang H, Im Seongil, Sung Myung M
Department of Chemistry Hanyang University, Seoul 133-791, Korea.
J Nanosci Nanotechnol. 2009 Dec;9(12):6962-7. doi: 10.1166/jnn.2009.1645.
We report a vapor-phase molecular layer deposition (MLD) of self-assembled multilayer thin films for organic thin-film transistor. In the present MLD process, alkylsiloxane self-assembled multilayers (SAMs) were grown under vacuum by repeated sequential adsorptions of C=C-terminated alkylsilane and aluminum hydroxide with ozone activation. The MLD method is a self-controlled layer-by-layer growth process, and is perfectly compatible with the atomic layer deposition (ALD) method. The SAMs films prepared exhibited good mechanical flexibility and stability, excellent insulating properties, and relatively high dielectric capacitances of 374 nF/cm2 with a high dielectric strength of 4 MV/cm. They were then used as a 12 nm-thick dielectric for pentacene-based thin-film transistors (TFTs), which showed a maximum field effect mobility of 0.57 cm2/V s, operating at -4 V with an on/off current ratio of approximately 10(3).
我们报道了一种用于有机薄膜晶体管的自组装多层薄膜的气相分子层沉积（MLD）方法。在当前的MLD工艺中，通过重复依次吸附带有臭氧活化的C = C端基烷基硅烷和氢氧化铝，在真空中生长烷基硅氧烷自组装多层膜（SAMs）。MLD方法是一种自控制的逐层生长过程，并且与原子层沉积（ALD）方法完全兼容。制备的SAMs薄膜表现出良好的机械柔韧性和稳定性、优异的绝缘性能以及相对较高的介电电容，为374 nF/cm2，介电强度高达4 MV/cm。然后将它们用作基于并五苯的薄膜晶体管（TFT）的12 nm厚电介质，该晶体管显示出最大场效应迁移率为0.57 cm2/V s，在-4 V下工作，开/关电流比约为10(3)。
