Kumar Vivek, Sen Shashwati, Sharma M, Muthe K P, Gaur N K, Gupta S K
Department of Physics, Barkatullah University, Bhopal 462026, M.R, India.
J Nanosci Nanotechnol. 2009 Sep;9(9):5278-82. doi: 10.1166/jnn.2009.1185.
Tellurium nanotubes were grown on bare and silver/gold nanoparticle (nucleation centers) deposited silicon substrates by vacuum deposition technique at a substrate temperature of 100 degrees C under high vacuum conditions. Silver and gold nanoparticles prepared on (111) oriented silicon substrates were found to act as nucleation centers for growth of Tellurium nanostructures. Density of nanotubes was found to increase while their diameter reduced when grown using metallic nanoparticle template. These Te nanostructures were investigated for their gas sensitivity. Tellurium nanotubes on Ag templates showed better response to NO in comparison to H2S and NH3 gases. Selectivity in response to NO was improved in comparison to Te thin film sensors reported earlier. The gas sensing mechanism was investigated using Raman and X-ray photoelectron spectroscopy techniques. The interaction of NO is seen to yield increased adsorption of oxygen that in turn increases hole density and conductivity in the material.
通过真空沉积技术，在100摄氏度的衬底温度和高真空条件下，在裸露的以及沉积有银/金纳米颗粒（成核中心）的硅衬底上生长碲纳米管。发现在（111）取向的硅衬底上制备的银和金纳米颗粒可作为碲纳米结构生长的成核中心。当使用金属纳米颗粒模板生长时，发现纳米管的密度增加而直径减小。对这些碲纳米结构的气敏性进行了研究。与H2S和NH3气体相比，Ag模板上的碲纳米管对NO表现出更好的响应。与先前报道的碲薄膜传感器相比，对NO的响应选择性得到了提高。使用拉曼光谱和X射线光电子能谱技术研究了气敏机理。可以看出，NO的相互作用会增加氧的吸附，进而增加材料中的空穴密度和电导率。
