超高频率（超过 100MHz）无芯 PZT 线性阵列。
Very high frequency (beyond 100 MHz) PZT kerfless linear arrays.
机构信息
NIH Center for Ultrasonic Transducer Technol., Univ. of Southern California, Los Angeles, CA, USA.
出版信息
IEEE Trans Ultrason Ferroelectr Freq Control. 2009 Oct;56(10):2304-10. doi: 10.1109/TUFFC.2009.1311.
This paper presents the design, fabrication, and measurements of very high frequency kerfless linear arrays prepared from PZT film and PZT bulk material. A 12-microm PZT thick film fabricated from PZT-5H powder/solution composite and a piece of 15-microm PZT-5H sheet were used to fabricate 32-element kerfless high-frequency linear arrays with photolithography. The PZT thick film was prepared by spin-coating of PZT sol-gel composite solution. The thin PZT-5H sheet sample was prepared by lapping a PZT-5H ceramic with a precision lapping machine. The measured results of the 2 arrays were compared. The PZT film array had a center frequency of 120 MHz, a bandwidth of 60% with a parylene matching layer, and an insertion loss of 41 dB. The PZT ceramic sheet array was found to have a center frequency of 128 MHz with a poorer bandwidth (40% with a parylene matching layer) but a better sensitivity (28 dB insertion loss).
本文介绍了由 PZT 薄膜和 PZT 块体材料制备的无切缝高频线性阵列的设计、制造和测量。使用由 PZT-5H 粉末/溶液复合材料制成的 12μm PZT 厚膜和 15μm PZT-5H 片制作了 32 个无切缝高频线性阵列，采用光刻技术。PZT 厚膜是通过旋涂 PZT 溶胶-凝胶复合溶液制备的。薄的 PZT-5H 片样品是通过使用精密研磨机研磨 PZT-5H 陶瓷片制备的。比较了这两个阵列的测量结果。PZT 薄膜阵列的中心频率为 120MHz，带宽为 60%，带有聚对二甲苯匹配层，插入损耗为 41dB。发现 PZT 陶瓷片阵列的中心频率为 128MHz，带宽较差（带有聚对二甲苯匹配层时为 40%），但灵敏度较高（插入损耗为 28dB）。
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