Institute of Solid State Physics, Semiconductor Optics, University of Bremen, PO Box 330 440, 28334 Bremen, Germany.
Nanotechnology. 2010 Jan 8;21(1):015204. doi: 10.1088/0957-4484/21/1/015204. Epub 2009 Nov 30.
We present electrically driven luminescence from single InGaN quantum dots embedded into a light emitting diode structure grown by metal-organic vapor-phase epitaxy. Single sharp emission lines in the green spectral region can be identified. Temperature dependent measurements demonstrate thermal stability of the emission of a single quantum dot up to 150 K. These results are an important step towards applications like electrically driven single-photon emitters, which are a basis for applications incorporating plastic optical fibers as well as for modern concepts of free space quantum cryptography.
我们展示了通过金属有机气相外延生长的发光二极管结构中嵌入的单个 InGaN 量子点的电致发光。可以识别出在绿光光谱区域中的单个尖锐发射线。温度相关测量表明，单个量子点的发射在 150 K 下具有热稳定性。这些结果是朝着电驱动单光子发射器等应用迈出的重要一步，这是结合塑料光纤的应用以及现代自由空间量子密码学概念的基础。
