Kako Satoshi, Santori Charles, Hoshino Katsuyuki, Götzinger Stephan, Yamamoto Yoshihisa, Arakawa Yasuhiko
Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Tokyo 153-8505, Japan.
Nat Mater. 2006 Nov;5(11):887-92. doi: 10.1038/nmat1763. Epub 2006 Oct 22.
Fundamentally secure quantum cryptography has still not seen widespread application owing to the difficulty of generating single photons on demand. Semiconductor quantum-dot structures have recently shown great promise as practical single-photon sources, and devices with integrated optical cavities and electrical-carrier injection have already been demonstrated. However, a significant obstacle for the application of commonly used III-V quantum dots to quantum-information-processing schemes is the requirement of liquid-helium cryogenic temperatures. Epitaxially grown gallium nitride quantum dots embedded in aluminium nitride have the potential for operation at much higher temperatures. Here, we report triggered single-photon emission from gallium nitride quantum dots at temperatures up to 200 K, a temperature easily reachable with thermo-electric cooling. Gallium nitride quantum dots also open a new wavelength region in the blue and near-ultraviolet portions of the spectrum for single-photon sources.
由于按需生成单光子存在困难，基础安全的量子密码学尚未得到广泛应用。半导体量子点结构最近作为实用的单光子源展现出了巨大潜力，并且已经展示出了具有集成光学腔和电载流子注入的器件。然而，将常用的III-V族量子点应用于量子信息处理方案的一个重大障碍是需要液氦低温温度。嵌入氮化铝中的外延生长氮化镓量子点具有在高得多的温度下工作的潜力。在此，我们报告了氮化镓量子点在高达200 K的温度下触发单光子发射，这一温度通过热电冷却很容易达到。氮化镓量子点还为单光子源在光谱的蓝色和近紫外部分开辟了一个新的波长区域。
