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具有低阻抗溅射氧化铱电极涂层的穿透式微电极阵列

Penetrating microelectrode arrays with low-impedance sputtered iridium oxide electrode coatings.

作者信息

Cogan Stuart F, Ehrlich Julia, Plante Timothy D, Van Wagenen Rick

机构信息

EIC Laboratories, Inc. Norwood, MA 02062, USA.

出版信息

Annu Int Conf IEEE Eng Med Biol Soc. 2009;2009:7147-50. doi: 10.1109/IEMBS.2009.5335359.

Abstract

Sputtered iridium oxide (SIROF) is a candidate low-impedance coating for neural stimulation and recording electrodes. SIROF on planar substrates has exhibited a high charge-injection capacity and impedance suitable for indwelling cortical microelectrode applications. In the present work, the properties of SIROF electrode coatings deposited onto multi-shank penetrating arrays intended for intracortical and intraneural applications were examined. The charge-injection properties under constant current pulsing were evaluated for a range of pulsewidths and current densities using voltage transients to determine maximum potential excursions in an inorganic model of interstitial fluid at 37 degrees C. The charge-injection capacity of the SIROFs was significantly improved by the use of positive potential biasing in the interpulse period, but even without bias, the SIROFs reversibly inject higher charge than other iridium oxides or platinum. Typical deliverable charge levels of 25 to 160 nC/phase were obtained with 2000 mum(2) electrodes depending on pulsewidth and interpulse bias. Similar sized platinum electrodes could inject 3 to 8 nC/phase.

摘要

溅射氧化铱(SIROF)是一种用于神经刺激和记录电极的低阻抗涂层候选材料。平面基板上的SIROF已展现出高电荷注入能力和适合植入式皮层微电极应用的阻抗。在本研究中,对沉积在用于皮层内和神经内应用的多针穿透阵列上的SIROF电极涂层性能进行了研究。在37摄氏度的间质液无机模型中,利用电压瞬变来确定最大电位偏移,针对一系列脉冲宽度和电流密度评估了恒流脉冲下的电荷注入特性。通过在脉冲间期使用正电位偏置,SIROF的电荷注入能力得到显著提高,但即使不施加偏置,SIROF也能比其他氧化铱或铂可逆地注入更高的电荷。根据脉冲宽度和脉冲间期偏置,2000μm²的电极可获得25至160nC/相的典型可输送电荷水平。类似尺寸的铂电极可注入3至8nC/相。

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Sputtered iridium oxide films for neural stimulation electrodes.用于神经刺激电极的溅射氧化铱薄膜
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