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等离子体金属-绝缘体-金属结构中掺铒氮化硅的增强发光。

Enhanced light emission from erbium doped silicon nitride in plasmonic metal-insulator-metal structures.

作者信息

Gong Yiyang, Yerci Selçuk, Li Rui, Dal Negro Luca, Vucković Jelena

机构信息

Department of Electrical Engineering, Stanford University, Stanford, CA 94305, USA. email:

出版信息

Opt Express. 2009 Nov 9;17(23):20642-50. doi: 10.1364/OE.17.020642.

Abstract

Plasmonic gratings and nano-particle arrays in a metal-insulator-metal structures are fabricated on an erbium doped silicon nitride layer. This material system enables simple fabrication of the structure, since the active nitride layer can be directly grown on metal. Enhancement of collected emission of up to 12 is observed on resonance, while broad off-resonant enhancement is also present. The output polarization behavior of the gratings and nano-particle arrays is investigated and matched to plasmonic resonances, and the behavior of coupled modes as a function of inter-particle distance is also discussed.

摘要

在掺铒氮化硅层上制备了金属 - 绝缘体 - 金属结构中的表面等离子体光栅和纳米粒子阵列。这种材料体系能够实现结构的简单制造,因为活性氮化物层可以直接生长在金属上。在共振时观察到收集发射增强高达12倍,同时也存在宽的非共振增强。研究了光栅和纳米粒子阵列的输出偏振行为并将其与表面等离子体共振相匹配,还讨论了耦合模式随粒子间距离的变化行为。

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