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电刺激诱导培养的施万细胞中钙依赖性的神经生长因子释放。

Electrical stimulation induces calcium-dependent release of NGF from cultured Schwann cells.

机构信息

Department of Spine Surgery, Institute of Orthopaedics, Xijing Hospital, The Fourth Military Medical University, Xi'an, China.

出版信息

Glia. 2010 Apr;58(5):622-31. doi: 10.1002/glia.20951.

Abstract

Production of nerve growth factor (NGF) from Schwann cells (SCs) progressively declines in the distal stump, if axonal regeneration is staggered across the suture site after peripheral nerve injuries. This may be an important factor limiting the outcome of nerve injury repair. Thus far, extensive efforts are devoted to modulating NGF production in cultured SCs, but little has been achieved. In the present in vitro study, electrical stimulation (ES) was attempted to stimulate cultured SCs to release NGF. Our data showed that ES was capable of enhancing NGF release from cultured SCs. An electrical field (1 Hz, 5 V/cm) caused a 4.1-fold increase in NGF release from cultured SCs. The ES-induced NGF release is calcium dependent. Depletion of extracellular or/and intracellular calcium partially/ completely abolished the ES-induced NGF release. Further pharmacological interventions showed that ES induces calcium influx through T-type voltage-gated calcium channels and mobilizes calcium from 1, 4, 5-trisphosphate-sensitive stores and caffeine/ryanodine-sensitive stores, both of which contributed to the enhanced NGF release induced by ES. In addition, a calcium-triggered exocytosis mechanism was involved in the ES-induced NGF release from cultured SCs. These findings show the feasibility of using ES in stimulating SCs to release NGF, which holds great potential in promoting nerve regeneration by enhancing survival and outgrowth of damaged nerves, and is of great significance in nerve injury repair and neuronal tissue engineering.

摘要

雪旺细胞(SCs)产生的神经生长因子(NGF)在轴突再生在周围神经损伤后穿过缝合部位时逐渐减少,如果轴突再生在缝合部位参差不齐。这可能是限制神经损伤修复结果的一个重要因素。到目前为止,人们已经投入大量精力来调节培养的SCs 中 NGF 的产生,但收效甚微。在本体外研究中,尝试用电刺激(ES)刺激培养的SCs 释放 NGF。我们的数据表明,ES 能够增强培养的SCs 释放 NGF。电场(1 Hz,5 V/cm)使培养的SCs 释放的 NGF 增加了 4.1 倍。ES 诱导的 NGF 释放依赖于钙。细胞外或/和细胞内钙的耗竭部分/完全消除了 ES 诱导的 NGF 释放。进一步的药理学干预表明,ES 通过 T 型电压门控钙通道诱导钙内流,并动员 1、4、5-三磷酸敏感储存库和咖啡因/ryanodine 敏感储存库中的钙,这两者都有助于增强 ES 诱导的 NGF 释放。此外,钙触发的胞吐机制参与了 ES 诱导的培养的SCs 中 NGF 的释放。这些发现表明,使用 ES 刺激SCs 释放 NGF 是可行的,这对于通过增强受损神经的存活和生长来促进神经再生具有巨大潜力,在神经损伤修复和神经元组织工程中具有重要意义。

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