富硅氧化物中氧含量对无定形硅纳米线生长的控制。
Control of amorphous silica nanowire growth by oxygen content of Si-rich oxide.
机构信息
Department of Applied Physics, College of Applied Science, Kyung Hee University, Yongin, Korea.
出版信息
Nanotechnology. 2010 Jan 29;21(4):045604. doi: 10.1088/0957-4484/21/4/045604. Epub 2009 Dec 10.
Ni-coated Si-rich oxide (SRO, SiO(x)) on a p-type Si wafer has been annealed with Si powder to grow silica nanowires (NWs), which have a composition of stoichiometric SiO(2), irrespective of x. The diameters of the NWs are well controlled from 82 to 23 nm by increasing x from 0.4 to 1.2 and they have a uniform distribution at a fixed x. These results suggest that the oxygen content (x) plays a crucial role in determining the diameter of the NWs at the early stage of the NW formation. The growth behaviors of the NWs are explained well based on a modified vapor-liquid-solid mechanism.
在 p 型硅片上的镍包覆富硅氧化层（SRO，SiO(x)）与硅粉一起退火，以生长出具有化学计量比 SiO(2)组成的二氧化硅纳米线（NWs），与 x 无关。通过将 x 从 0.4 增加到 1.2，NWs 的直径可以从 82nm 到 23nm 得到很好的控制，并且在固定的 x 下具有均匀的分布。这些结果表明，在 NW 形成的早期阶段，氧含量（x）在决定 NW 的直径方面起着至关重要的作用。根据改进的气-液-固机制，可以很好地解释 NWs 的生长行为。
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